The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2016

Filed:

Mar. 30, 2012
Applicants:

Siegfried Krassnitzer, Feldkirch, AT;

Kurt Ruhm, Schaanwald, LI;

Inventors:

Siegfried Krassnitzer, Feldkirch, AT;

Kurt Ruhm, Schaanwald, LI;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); C23C 14/35 (2006.01); H01J 37/34 (2006.01);
U.S. Cl.
CPC ...
C23C 14/35 (2013.01); C23C 14/352 (2013.01); H01J 37/3405 (2013.01); H01J 37/3444 (2013.01); H01J 37/3464 (2013.01); H01J 37/3467 (2013.01); H01J 37/3497 (2013.01);
Abstract

The invention relates to a magnetron sputtering process that allows material to be sputtered from a target surface in such a way that a high percentage of the sputtered material is provided in the form of ions. According to the invention, said aim is achieved using a simple generator, the power of which is fed to multiple magnetron sputtering sources spread out over several time intervals, i.e. the maximum power is supplied to one sputtering source during one time interval, and the maximum power is supplied to the following sputtering source in the subsequent time interval, such that discharge current densities of more than 0.2 A/cmare obtained. The sputtering target can cool down during the off time, thus preventing the temperature limit from being exceeded.


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