The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Mar. 15, 2013
Applicant:
Nitto Denko Corporation, Osaka, JP;
Inventors:
Ekambaram Sambandan, Carlsbad, CA (US);
Bin Zhang, San Diego, CA (US);
Assignee:
NITTO DENKO CORPORATION, Osaka, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); C02F 1/32 (2006.01); B01J 27/24 (2006.01); B01J 21/06 (2006.01); B01J 23/02 (2006.01); B01J 23/06 (2006.01); B01J 23/14 (2006.01); B01J 23/18 (2006.01); B01J 23/22 (2006.01); B01J 23/28 (2006.01); B01J 23/30 (2006.01); B01J 23/755 (2006.01); B01J 35/00 (2006.01); C02F 101/16 (2006.01); C02F 101/30 (2006.01); C02F 101/32 (2006.01);
U.S. Cl.
CPC ...
C02F 1/32 (2013.01); B01J 21/063 (2013.01); B01J 23/02 (2013.01); B01J 23/06 (2013.01); B01J 23/14 (2013.01); B01J 23/18 (2013.01); B01J 23/22 (2013.01); B01J 23/28 (2013.01); B01J 23/30 (2013.01); B01J 23/755 (2013.01); B01J 27/24 (2013.01); B01J 35/004 (2013.01); C02F 2101/16 (2013.01); C02F 2101/308 (2013.01); C02F 2101/322 (2013.01); C02F 2303/04 (2013.01); C02F 2305/10 (2013.01);
Abstract
Described herein are elements comprising a p-type semiconductor comprising mixed valence oxide compounds and an n-type semiconductor having a deeper valence band than the p-type semiconductor valence bands wherein the semiconductor types are in ionic communication with each other. The elements enhance photocatalytic activity.