The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2016

Filed:

Feb. 07, 2013
Applicants:

Arman Hajati, Santa Clara, CA (US);

Dimitre Latev, San Jose, CA (US);

Deane Gardner, Cupertino, CA (US);

Hung-fai Stephen Law, Los Altos, CA (US);

Inventors:

Arman Hajati, Santa Clara, CA (US);

Dimitre Latev, San Jose, CA (US);

Deane Gardner, Cupertino, CA (US);

Hung-Fai Stephen Law, Los Altos, CA (US);

Assignee:

FUJIFILM DIMATIX, INC., Lebanon, NH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B06B 1/06 (2006.01); B25J 15/12 (2006.01); H01L 27/20 (2006.01); B25J 9/10 (2006.01); B25J 15/00 (2006.01); B06B 1/02 (2006.01); H01L 41/09 (2006.01);
U.S. Cl.
CPC ...
B25J 15/12 (2013.01); B06B 1/0292 (2013.01); B06B 1/0622 (2013.01); B25J 9/104 (2013.01); B25J 15/0009 (2013.01); H01L 27/20 (2013.01); H01L 41/098 (2013.01); Y10S 901/29 (2013.01);
Abstract

Embodiments reduce capacitive cross-talk between micromachined ultrasonic transducer (MUT) arrays through grounding of the substrate over which the arrays are fabricated. In embodiments, a metal-semiconductor contact is formed to a semiconductor device layer of a substrate and coupled to a ground plane common to a first electrode of the transducer elements to suppress capacitive coupling of signal lines connected to a second electrode of the transducer elements.


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