The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2016

Filed:

Oct. 03, 2014
Applicant:

Analog Devices Global, Hamilton, BM;

Inventors:

Turusan Kolcuoglu, Istanbul, TR;

Bilal Tarik Cavus, Istanbul, TR;

Yusuf Alperen Atesal, Istanbul, TR;

Assignee:

ANALOG DEVICES GLOBAL, Hamilton, BM;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/44 (2006.01);
U.S. Cl.
CPC ...
H04B 1/44 (2013.01);
Abstract

Apparatus and methods for radio frequency (RF) switches are provided herein. In certain implementations, an RF switching circuit includes an adaptive switch bias circuit that controls gate and/or channel voltages of one or more field effect transistor (FET) switches. Additionally, the adaptive switch bias circuit is powered by a power high supply voltage and a power low supply voltage, and can be used to selectively turn on or off the FET switches based on a state of one or more switch enable signals. The adaptive switch bias circuit adaptively biases that gate and/or channel voltages of the FET switches based on a voltage difference between the power high and power low supply voltages to provide switch biasing suitable for use with two or more different power supply voltage levels.


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