The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2016

Filed:

Dec. 05, 2014
Applicant:

Murata Manufacturing Co., Ltd., Kyoto, JP;

Inventor:

Toshiki Matsui, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/22 (2006.01); H03F 1/02 (2006.01); H03F 3/19 (2006.01); H03F 1/32 (2006.01); H03F 1/56 (2006.01); H03F 3/21 (2006.01); H03F 3/24 (2006.01);
U.S. Cl.
CPC ...
H03F 1/0222 (2013.01); H03F 1/3223 (2013.01); H03F 1/56 (2013.01); H03F 3/19 (2013.01); H03F 3/211 (2013.01); H03F 3/24 (2013.01); H03F 2200/111 (2013.01); H03F 2200/222 (2013.01); H03F 2200/318 (2013.01); H03F 2200/387 (2013.01); H03F 2200/411 (2013.01); H03F 2200/429 (2013.01); H03F 2200/451 (2013.01); H03F 2200/504 (2013.01);
Abstract

The linearity of a power amplifying module employing an envelope tracking scheme is improved. The power amplifying module includes a first bipolar transistor having a base to which a first radio frequency signal is input and an emitter grounded, and a second bipolar transistor having a base to which a first constant voltage is applied, a collector to which a first power supply voltage is applied, the first power supply voltage adapted to vary in accordance with an amplitude of the first radio frequency signal, and an emitter connected to a collector of the first bipolar transistor. The second bipolar transistor is configured to output a first amplified signal, obtained by amplifying the first radio frequency signal, from the collector of the second bipolar transistor.


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