The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
May. 06, 2015
Sifotonics Technologies Co., Ltd., Woburn, MA (US);
Mengyuan Huang, Beijing, CN;
Pengfei Cai, Beijing, CN;
Liangbo Wang, Beijing, CN;
Su Li, Beijing, CN;
Wang Chen, Beijing, CN;
Ching-yin Hong, Lexington, MA (US);
Dong Pan, Andover, MA (US);
SIFOTONICS TECHNOLOGIES CO., LTD., Woburn, MA (US);
Abstract
Various embodiments of a photonic device and fabrication method thereof are described herein. A device may include a substrate, a bottom contact layer, a current confinement layer, an intrinsic layer, an absorption layer, and a top contact layer. The bottom contact layer may be of a first polarity and may be disposed on the substrate. The current confinement layer may be disposed on the bottom contact layer. The intrinsic layer may be disposed on the current confinement layer. The absorption layer may be disposed on the intrinsic layer. The top contact layer may be of a second polarity and may be disposed on the absorption layer. The second polarity is opposite to the first polarity.