The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Feb. 20, 2014
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Young Seok Kwon, Gyeonggi-do, KR;
Kwon Hong, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/06 (2006.01); H01L 45/00 (2006.01); C23C 16/30 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1616 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/144 (2013.01); H01L 45/1683 (2013.01); C23C 16/305 (2013.01); C23C 16/45523 (2013.01);
Abstract
A method for fabricating a semiconductor device includes supplying a first source gas including a germanium (Ge) precursor onto a semiconductor substrate for a first time period, and periodically interrupting the supplying of the first source gas for the first time period to form Ge elements on the semiconductor substrate.