The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2016

Filed:

Apr. 04, 2014
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Hiroshi Katsuno, Tokyo, JP;

Yasuo Ohba, Kanagawa-ken, JP;

Kei Kaneko, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/38 (2010.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01); H01L 33/42 (2010.01);
U.S. Cl.
CPC ...
H01L 33/38 (2013.01); H01L 33/32 (2013.01); H01L 33/40 (2013.01); H01L 33/42 (2013.01); H01L 33/387 (2013.01); H01L 2224/13 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/73265 (2013.01); H01L 2933/0016 (2013.01);
Abstract

A semiconductor light-emitting element includes, a first semiconductor layer, a second semiconductor layer, a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode provided on the second semiconductor layer. A side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy. The second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer.


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Katsuno, Hiroshi. (2016). Semiconductor light-emitting element (U.S. Patent No. 9373752). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9373752

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