The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Sep. 12, 2012
Joachim Hertkorn, Alteglofsheim, DE;
Tetsuya Taki, Tokyo, JP;
Karl Engl, Pentling, DE;
Johannes Baur, Regensburg, DE;
Berthold Hahn, Hemau, DE;
Volker Haerle, Deuerling, DE;
Ann-kathrin Haerle, Deuerling, DE;
Jakob Johannes Haerle, Deuerling, DE;
Johanna Magdalena Haerle, Deuerling, DE;
Joachim Hertkorn, Alteglofsheim, DE;
Tetsuya Taki, Tokyo, JP;
Karl Engl, Pentling, DE;
Johannes Baur, Regensburg, DE;
Berthold Hahn, Hemau, DE;
Volker Haerle, Deuerling, DE;
Osram Opto Semiconductors GmbH, Regensburg, DE;
Abstract
A method for producing an optoelectronic component is provided. A transfer layer, containing InGaN with 0<x<1, is grown onto a growth substrate. Subsequently, ions are implanted into the transfer layer to form a separation zone, a carrier substrate is applied, and the transfer layer is separated by way of heat treatment. A further transfer layer, containing InGaN with 0<y≦1 and y>x, is grown onto the previously grown transfer layer, ions are implanted into the further transfer layer to form a separation zone, a further carrier substrate is applied, and the further transfer layer is separated by way of heat treatment. Subsequently, a semiconductor layer sequence, containing an active layer, is grown onto the surface of the further transfer layer facing away from the further carrier substrate.