The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2016

Filed:

Jun. 28, 2012
Applicants:

Alison Joan Lennon, Rozelle, AU;

Zhongtian LI, Kensington, AU;

Stuart Ross Wenham, Cronulla, AU;

Pei Hsuan LU, Marsfield, AU;

Inventors:

Alison Joan Lennon, Rozelle, AU;

Zhongtian Li, Kensington, AU;

Stuart Ross Wenham, Cronulla, AU;

Pei Hsuan Lu, Marsfield, AU;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/0224 (2006.01); H01L 21/225 (2006.01); H01L 31/0216 (2014.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01); H01L 31/056 (2014.01);
U.S. Cl.
CPC ...
H01L 31/022441 (2013.01); H01L 21/2254 (2013.01); H01L 31/02168 (2013.01); H01L 31/056 (2014.12); H01L 31/0682 (2013.01); H01L 31/188 (2013.01); H01L 31/1868 (2013.01); Y02E 10/52 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract

A dielectric, structure and a method of forming a dielectric structure for a rear surface of a silicon solar cell are provided. The method comprises forming a first dielectric layer over the rear surface of the silicon solar cell, and then depositing a layer of metal such as aluminum over the first dielectric layer. The metal layer is then anodized to form a porous layer and a material layer is deposited over a surface of the porous layer such that the material deposits on the surface of the porous layer without contacting the silicon surface.


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