The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Feb. 03, 2015
Applicant:
Hestia Power Inc., Hsinchu, TW;
Inventors:
Cheng-Tyng Yen, Hsinchu, TW;
Chien-Chung Hung, Hsinchu, TW;
Yao-Feng Huang, Hsinchu, TW;
Hsiang-Ting Hung, Hsinchu, TW;
Chwan-Ying Lee, Hsinchu, TW;
Assignee:
HESTIA POWER INC., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0312 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/10 (2006.01); H01L 21/266 (2006.01); H01L 21/28 (2006.01); H01L 21/027 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 21/0223 (2013.01); H01L 21/0274 (2013.01); H01L 21/02529 (2013.01); H01L 21/266 (2013.01); H01L 21/28035 (2013.01); H01L 21/324 (2013.01); H01L 29/1041 (2013.01); H01L 29/1608 (2013.01); H01L 29/4916 (2013.01); H01L 29/66325 (2013.01); H01L 29/66681 (2013.01); H01L 29/7393 (2013.01);
Abstract
A silicon carbide semiconductor device and method of manufacture thereof is made by providing a channel control zone which has impurity concentration distribution increased gradually from a first doping boundary to reach a maximum value between the first doping boundary and a second doping boundary, then decreased gradually toward the second doping boundary, so that the silicon carbide semiconductor device is formed with a lower conduction resistance and increased drain current without sacrificing threshold voltage.