The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Oct. 06, 2014
Chunghwa Picture Tubes, Ltd., Taoyuan County, TW;
Shin-Chuan Chiang, Taipei, TW;
En-Chih Liu, Taoyuan, TW;
Yu-Hsien Chen, Hsinchu, TW;
Ya-Ju Lu, New Taipei, TW;
Yen-Yu Huang, Taoyuan, TW;
Chunghwa Picture Tubes, LTD., Taoyuan, TW;
Abstract
The thin film transistor includes a gate, a gate insulating layer, a semiconductor layer, and a source and a drain. The gate insulating layer covers the gate. The semiconductor layer is located on the gate insulating layer which is disposed above the gate. The source and the drain are disposed above the gate insulating layer and are electrically connected to the semiconductor layer, respectively. The source and the drain are respectively located in different layers. A first contact resistance is existed between the semiconductor layer and the source, a second contact resistance is existed between the semiconductor layer and the drain, and. the first contact resistance is less than the second contact resistance.