The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Aug. 01, 2014
Applicant:
Renesas Electronics Corporation, Kawasaki-shi, JP;
Inventors:
Assignee:
RENESAS ELECTRONICS CORPORATION, Kawasaki-shi, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 49/02 (2006.01); H01L 21/316 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/06 (2006.01); H01L 21/285 (2006.01); H01L 21/3205 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 21/28506 (2013.01); H01L 21/31637 (2013.01); H01L 21/32053 (2013.01); H01L 21/32105 (2013.01); H01L 23/5223 (2013.01); H01L 23/5283 (2013.01); H01L 23/5286 (2013.01); H01L 27/0688 (2013.01); H01L 28/75 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device production method includes forming a transition metal film, irradiating a surface of the transition metal film with a mono-silane gas to form a silicon-containing transition metal film, and oxidizing the silicon-containing transition metal film by an oxygen plasma treatment, thereby forming a transition metal silicate film.