The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Aug. 19, 2015
Renesas Electronics Corporation, Tokyo, JP;
Masayuki Terai, Tokyo, JP;
Renesas Electronics Corporation, Kawasaki-Shi, Kanagawa, JP;
Abstract
A resistance change nonvolatile memory device, includes: a first wiring; an interlayer insulating layer formed over the first wiring; and a second wiring formed over the interlayer insulating layer, wherein the interlayer insulating layer is interposed between the first wiring and the second wiring and includes a hole having a width not greater than a width of the first wiring, wherein the resistance change nonvolatile memory device further includes a lower electrode formed at a bottom portion of the hole and contacting the first wiring; a resistance change layer formed on the lower electrode; and an upper electrode formed over the resistance change layer, wherein the lower electrode, the resistance change layer, and the upper electrode are formed inside the hole, wherein an entirety of the resistance change layer is disposed inside the hole.