The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2016

Filed:

Feb. 18, 2015
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Takehito Okabe, Atsugi, JP;

Kentarou Suzuki, Kawasaki, JP;

Takashi Usui, Ashigarakami, JP;

Taro Kato, Kawasaki, JP;

Mineo Shimotsusa, Machida, JP;

Shunsuke Takimoto, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14685 (2013.01); H01L 27/14629 (2013.01); H01L 27/14632 (2013.01); H01L 27/14641 (2013.01); H01L 27/14687 (2013.01); H01L 27/14689 (2013.01);
Abstract

A method for manufacturing a solid-state image pickup device is provided. The image pickup apparatus includes a photoelectric conversion portion disposed on the semiconductor substrate, a first insulating film over the photoelectric conversion portion, functioning as an antireflection film, a second insulating film on the first insulating film, disposed corresponding to the photoelectric conversion portion, and a waveguide having a clad and a core whose bottom is disposed on the second insulating film. The method includes forming an opening by anisotropically etching part of a member disposed over the photoelectric conversion portion, thereby forming the clad, and forming the core in the opening. In the method, the etching is performed under conditions where the etching rate of the second insulating film is lower than the etching rate of the member.


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