The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Apr. 22, 2013
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Yutaka Takamaru, Osaka, JP;
Kazuatsu Ito, Osaka, JP;
Tadayoshi Miyamoto, Osaka, JP;
Mitsunobu Miyamoto, Osaka, JP;
Makoto Nakazawa, Osaka, JP;
Yasuyuki Ogawa, Osaka, JP;
Seiichi Uchida, Osaka, JP;
Shigeyasu Mori, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
This semiconductor device (A) includes: an oxide layer () which includes a semiconductor region () and a conductor region () that contacts with the semiconductor region; a source electrode () and a drain electrode () which are electrically connected to the semiconductor region; an insulating layer () formed on the source and drain electrodes; a transparent electrode () arranged to overlap at least partially with the conductor region with the insulating layer interposed between them; a source line () formed out of the same conductive film as the source electrode; and a gate extended line () formed out of the same conductive film as a gate electrode (). The source line is electrically connected to the gate extended line via a transparent connecting layer () which is formed out of the same conductive film as the transparent electrode.