The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Jan. 02, 2014
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;
Guo Zhao, Shenzhen, CN;
Shenzhen China Star Optoelectronics Technology Co., Ltd, Shenzhen, Guangdong, CN;
Abstract
The present invention discloses a polysilicon TFT device and the manufacturing method thereof. The polysilicon TFT device comprises: a scanning line and a data line arranged alternately; a semiconductor layer electrically connected with the scanning line and the data line; and a pixel electrode electrically connected with the semiconductor layer. Multiple channel regions and multiple doped regions are provided sequentially with interval between the connecting point of the semiconductor layer with the data line and the connecting point of the semiconductor layer with the pixel electrode, the channel regions are the portions of the semiconductor layer overlapping the scanning line, the rest portions are the doped regions, the width of at least one said doped region is 0.5˜3 μm, the ion doping concentration is 2*E11˜5*E15. In the present invention, the pattern of the semiconductor layer is designed as a bending pattern, which sequentially intersects the scanning lines and forms multiple channel regions and multiple doped regions provided with interval. It reduces the leakage current by controlling the width of the doped region and the ion doping concentration.