The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2016

Filed:

Jul. 16, 2015
Applicants:

Won-seok Jung, Anyang-si, KR;

Youngok Kim, Suwon-si, KR;

Jihye Kim, Anyang-si, KR;

Kyungjoong Joo, Suwon-si, KR;

Inventors:

Won-Seok Jung, Anyang-si, KR;

Youngok Kim, Suwon-si, KR;

Jihye Kim, Anyang-si, KR;

Kyungjoong Joo, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 23/535 (2006.01); H01L 29/51 (2006.01); H01L 29/423 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 23/535 (2013.01); H01L 27/0688 (2013.01); H01L 27/11578 (2013.01); H01L 29/42348 (2013.01); H01L 29/513 (2013.01);
Abstract

A semiconductor memory device may include stacks arranged in a first direction and vertical channel structures provided through the stacks. Each of the stacks may include gate electrodes and insulating layers alternately stacked on a substrate. Each of the vertical channel structures may include a semiconductor pattern connected to the substrate and a vertical channel pattern connected to the semiconductor pattern. Each of the semiconductor patterns may have a recessed sidewall, and the semiconductor patterns may have minimum widths different from each other.


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