The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Feb. 03, 2014
Woonghee Sohn, Seoul, KR;
Kihyun Yun, Seoul, KR;
Myoungbum Lee, Seoul, KR;
Jeonggil Lee, Hwaseong-si, KR;
Tai-soo Lim, Seoul, KR;
Yong Chae Jung, Suwon-si, KR;
Woonghee Sohn, Seoul, KR;
Kihyun Yun, Seoul, KR;
Myoungbum Lee, Seoul, KR;
Jeonggil Lee, Hwaseong-si, KR;
Tai-Soo Lim, Seoul, KR;
Yong Chae Jung, Suwon-si, KR;
Abstract
Provided are a semiconductor device and a method of fabricating the same. The method may include forming an electrode structure including insulating layers and electrode layers alternatingly stacked on a substrate, forming a channel hole to penetrate the electrode structure, forming a data storage layer on a sidewall of the channel hole, and forming a semiconductor pattern on a sidewall of the data storage layer to be electrically connected to the substrate. The electrode layers may be metal-silicide layers, and the insulating layers and the electrode layers may be formed in an in-situ manner using the same deposition system.