The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Aug. 21, 2014
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Chan Sun Hyun, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 27/115 (2006.01); H01L 23/50 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76843 (2013.01); H01L 21/76802 (2013.01); H01L 23/50 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11548 (2013.01); H01L 27/11556 (2013.01); H01L 27/11575 (2013.01); H01L 27/11582 (2013.01);
Abstract
A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes conductive patterns and interlayer insulating patterns having a stair structure and being alternately stacked, pad patterns connected to end portions of upper surfaces of the conductive patterns exposed through the stair structure, and a channel film penetrating the conductive patterns and the interlayer insulating patterns.