The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Sep. 24, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
HyoJoong Kim, Seongnam-si, KR;
ByeongHoon Kim, Hwasung-si, KR;
In-Young Kim, Hwasung-si, KR;
Sang Bong Shin, Hwasung-si, KR;
Songha Oh, Suwon-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 27/115 (2006.01); H01L 21/02 (2006.01); H01L 21/321 (2006.01); H01L 21/3213 (2006.01); H01L 21/3215 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28273 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/321 (2013.01); H01L 21/32133 (2013.01); H01L 21/32155 (2013.01); H01L 21/76224 (2013.01); H01L 27/11529 (2013.01); H01L 27/11543 (2013.01); H01L 29/42324 (2013.01); H01L 29/7881 (2013.01);
Abstract
A semiconductor device includes a substrate including an active region defined by a device isolation pattern and a floating gate on the active region. The floating gate includes an upper portion, a lower portion having a width greater than a width of the upper portion, and a step-difference portion between the upper portion and the lower portion. A dielectric pattern is on the floating gate, and a control gate is on the dielectric pattern. The lower portion of the floating gate has a height of about 4 nm or more.