The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Oct. 01, 2014
Applicant:
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Inventors:
Andrei T. Iancu, Stanford, CA (US);
Friedrich B. Prinz, Woodside, CA (US);
Assignee:
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02532 (2013.01); H01L 21/02005 (2013.01); H01L 21/0245 (2013.01); H01L 21/02381 (2013.01); H01L 21/02664 (2013.01); H01L 21/30604 (2013.01);
Abstract
A method of forming a free-standing silicon film that includes providing a Si substrate, depositing a layered structure on the Si substrate, where the layered structure includes a Si device layer and a SiGe sacrificial layer, and removing the SiGe sacrificial layer with a spin etch process, where the Si device layer is released from the layered structure.
Quick Actions:
Iancu, Andrei. (2016). Method of fabricating thin, freestanding, single crystal silicon sheet (U.S. Patent No. 9373503). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9373503
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile