The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Jan. 19, 2015
Applicants:
Tsinghua University, Beijing, CN;
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Inventors:
Peng Liu, Beijing, CN;
De-Jie Li, Beijing, CN;
Chun-Hai Zhang, Beijing, CN;
Duan-Liang Zhou, Beijing, CN;
Bing-Chu Du, Beijing, CN;
Shou-Shan Fan, Beijing, CN;
Assignees:
Tsinghua University, Beijing, CN;
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01J 29/04 (2006.01); H01J 31/12 (2006.01);
U.S. Cl.
CPC ...
H01J 29/04 (2013.01); H01J 31/12 (2013.01); H01J 2201/3125 (2013.01);
Abstract
An electron emission source includes a first electrode, a semiconductor layer, an insulating layer, and a second electrode stacked in that sequence, wherein the semiconductor layer defines a number of holes, the first electrode comprises a carbon nanotube layer, and a portion of the carbon nanotube layer corresponding to the number of holes is suspended on the number of holes.