The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Dec. 20, 2013
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Dan Bi Choi, Suwon-si, KR;
Jung Hun Lee, Suwon-si, KR;
Samsung Display Co., Ltd., Samsung-ro, Giheung-Gu, Yongin-si, Gyeonggi-Do, KR;
Abstract
A thin film transistor substrate, a method for fabricating the same, and a display device including the same are provided. In one aspect of the present invention, there is provided a thin film transistor substrate comprising a substrate, a semiconductor layer formed on the substrate, a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film, an interlayer insulating film formed on the gate electrode and including a source contact hole and a drain contact hole for exposing portions of the semiconductor layer, and a source electrode and a drain electrode respectively inserted into the source contact hole and the drain contact hole. The interlayer insulating film includes a first convex portion formed at an inlet of the source contact hole and at an inlet of the drain contact hole.