The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Jul. 15, 2011
Byung Hee Hong, Seoul, KR;
Jong-hyun Ahn, Suwon-si, KR;
Ji Beom Yoo, Suwon-si, KR;
Su Kang Bae, Suwon-si, KR;
Myung Hee Jung, Suwon-si, KR;
Houk Jang, Suwon-si, KR;
Youngbin Lee, Suwon-si, KR;
Sang Jin Kim, Suwon-si, KR;
Byung Hee Hong, Seoul, KR;
Jong-Hyun Ahn, Suwon-si, KR;
Ji Beom Yoo, Suwon-si, KR;
Su Kang Bae, Suwon-si, KR;
Myung Hee Jung, Suwon-si, KR;
Houk Jang, Suwon-si, KR;
Youngbin Lee, Suwon-si, KR;
Sang Jin Kim, Suwon-si, KR;
Graphene Square, Inc., Seoul, KR;
Hanwha Techwin Co., Ltd., Changwon-si, KR;
Abstract
The present invention relates to a method for forming graphene at a low temperature, to a method for direct transfer of graphene using same, and to a graphene sheet. The method for forming graphene at a low temperature comprises supplying a carbon-source-containing gas to a metal catalyst layer for graphene growth formed on a substrate, and forming graphene at a low temperature of 500° C. or less by means of inductively coupled plasma-chemical vapor deposition (ICP-CVD).