The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2016

Filed:

Feb. 02, 2011
Applicants:

Robert V. Fox, Idaho Falls, ID (US);

Fengyan Zhang, Pocatello, ID (US);

Rene G. Rodriguez, Pocatello, ID (US);

Joshua J. Pak, Pocatello, ID (US);

Chivin Sun, Staten Island, NY (US);

Inventors:

Robert V. Fox, Idaho Falls, ID (US);

Fengyan Zhang, Pocatello, ID (US);

Rene G. Rodriguez, Pocatello, ID (US);

Joshua J. Pak, Pocatello, ID (US);

Chivin Sun, Staten Island, NY (US);

Assignee:

Battelle Energy Alliance, LLC, Idaho Falls, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/02 (2006.01); H01L 31/18 (2006.01); C01B 17/00 (2006.01); B82Y 30/00 (2011.01); C01G 15/00 (2006.01); H01L 31/032 (2006.01); H01L 31/0392 (2006.01); H01L 31/0749 (2012.01);
U.S. Cl.
CPC ...
B82Y 30/00 (2013.01); C01G 15/006 (2013.01); H01L 31/0322 (2013.01); H01L 31/03923 (2013.01); H01L 31/0749 (2013.01); C01P 2002/72 (2013.01); C01P 2002/84 (2013.01); C01P 2004/62 (2013.01); C01P 2004/64 (2013.01); C01P 2006/40 (2013.01); Y02E 10/541 (2013.01);
Abstract

Single source precursors or pre-copolymers of single source precursors are subjected to microwave radiation to form particles of a I-III-VImaterial. Such particles may be formed in a wurtzite phase and may be converted to a chalcopyrite phase by, for example, exposure to heat. The particles in the wurtzite phase may have a substantially hexagonal shape that enables stacking into ordered layers. The particles in the wurtzite phase may be mixed with particles in the chalcopyrite phase (i.e., chalcopyrite nanoparticles) that may fill voids within the ordered layers of the particles in the wurtzite phase thus produce films with good coverage. In some embodiments, the methods are used to form layers of semiconductor materials comprising a I-III-VImaterial. Devices such as, for example, thin-film solar cells may be fabricated using such methods.


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