The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2016

Filed:

May. 07, 2015
Applicant:

Huazhong University of Science and Technology, Wuhan, CN;

Inventors:

Xiangshui Miao, Wuhan, CN;

Yi Li, Wuhan, CN;

Yingpeng Zhong, Wuhan, CN;

Lei Xu, Wuhan, CN;

Huajun Sun, Wuhan, CN;

Xiaomin Cheng, Wuhan, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/003 (2006.01); G11C 13/00 (2006.01); H03K 19/173 (2006.01); H03K 19/20 (2006.01); H03K 19/177 (2006.01);
U.S. Cl.
CPC ...
H03K 19/00346 (2013.01); G11C 13/0004 (2013.01); G11C 13/004 (2013.01); H03K 19/1733 (2013.01); H03K 19/17724 (2013.01); H03K 19/20 (2013.01);
Abstract

A nonvolatile logic gate circuit based on phase change memories, including a first phase change memory, a second phase change memory, a first controllable switch element and a first resistor, wherein a first end of the first phase change memory serves as a first input end of an AND gate circuit, a first end of the second phase change memory serves as a second input end of the AND gate circuit, a first end of the first controllable switch element is connected to a second end of the first phase change memory, a second end of the first controllable switch element is grounded; one end of the first resistor is connected to the first end of the second phase change memory, the other end of the first resistor is grounded; and the first end of the second phase change memory serves as an output end of the AND gate circuit.


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