The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2016

Filed:

Aug. 17, 2011
Applicants:

Gabi Neubauer, Los Gatos, CA (US);

Alfred Feitisch, Los Gatos, CA (US);

Mathias Schrempel, Alta Loma, CA (US);

Inventors:

Gabi Neubauer, Los Gatos, CA (US);

Alfred Feitisch, Los Gatos, CA (US);

Mathias Schrempel, Alta Loma, CA (US);

Assignee:

SpectraSensors, Inc., Rancho Cucamonga, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/022 (2006.01); H01L 23/00 (2006.01); H01S 5/042 (2006.01); G01N 21/39 (2006.01); G01N 21/71 (2006.01);
U.S. Cl.
CPC ...
H01S 5/02272 (2013.01); G01N 21/39 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01S 5/0425 (2013.01); G01N 21/718 (2013.01); G01N 2021/399 (2013.01); H01L 24/48 (2013.01); H01L 2224/29101 (2013.01); H01L 2224/29109 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/32501 (2013.01); H01L 2224/4823 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/83065 (2013.01); H01L 2224/83075 (2013.01); H01L 2224/83801 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/0104 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01024 (2013.01); H01L 2924/01025 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/0133 (2013.01); H01L 2924/01042 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/01051 (2013.01); H01L 2924/01058 (2013.01); H01L 2924/01061 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01075 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/15747 (2013.01); H01L 2924/19107 (2013.01); H01S 5/02212 (2013.01);
Abstract

A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness of a metallic barrier layer to be applied to the first contact surface. A metallic barrier layer having the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the metallic barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.


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