The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2016

Filed:

Jun. 12, 2013
Applicants:

Kouichi Izuhara, Nishikamo-gun, JP;

Makoto Daifuku, Nishikamo-gun, JP;

Yasushi Miyata, Nagoya, JP;

Inventors:

Kouichi Izuhara, Nishikamo-gun, JP;

Makoto Daifuku, Nishikamo-gun, JP;

Yasushi Miyata, Nagoya, JP;

Assignees:

SANGO CO., LTD., Miyoshi-shi, JP;

CITY OF NAGOYA, Nagoya-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/583 (2010.01); H01M 4/134 (2010.01); H01M 4/1395 (2010.01); H01M 4/36 (2006.01); H01M 4/38 (2006.01); H01M 4/62 (2006.01); H01M 4/66 (2006.01); C23C 16/26 (2006.01); C23C 16/513 (2006.01); H01M 4/04 (2006.01); C23C 16/509 (2006.01);
U.S. Cl.
CPC ...
H01M 4/583 (2013.01); C23C 16/26 (2013.01); C23C 16/5096 (2013.01); C23C 16/513 (2013.01); H01M 4/0428 (2013.01); H01M 4/134 (2013.01); H01M 4/1395 (2013.01); H01M 4/362 (2013.01); H01M 4/386 (2013.01); H01M 4/625 (2013.01); H01M 4/661 (2013.01); Y02E 60/122 (2013.01); Y02P 70/54 (2015.11);
Abstract

Provided is a negative electrode having a new structure for realizing a lithium secondary battery having increased charging/discharging capacities and a battery capacity that is reduced less due to repeated charging/discharging. The negative electrode for a lithium secondary battery includes a current collector substrate; a carbon nanochips layer including graphene sheets grown to incline in irregular directions independently from the current collector substrate; and a silicon thin film layer on the carbon nanochips layer, in which gaps among the carbon nanochips are formed between the silicon thin film layer and the current collector substrate. The Raman spectrum of graphite forming the carbon nanochips layer has a g/d ratio of 0.30 to 0.80, both inclusive, and the crystallinity level of the graphite is lower than that of graphite forming carbon nanowalls. The carbon nanochips layer can be formed by a plasma CVD method using a gaseous mixture of methane and hydrogen, for example.


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