The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Oct. 05, 2011
DO Kyung Hwang, Duluth, GA (US);
Jungbae Kim, Alpharetta, GA (US);
Canek Fuentes-hernandez, Atlanta, GA (US);
Bernard Kippelen, Decatur, GA (US);
Do Kyung Hwang, Duluth, GA (US);
Jungbae Kim, Alpharetta, GA (US);
Canek Fuentes-Hernandez, Atlanta, GA (US);
Bernard Kippelen, Decatur, GA (US);
Georgia Tech Research Corporation, Atlanta, GA (US);
Abstract
A field-effect transistor includes a gate, a source and a drain; a semiconductor layer between the source and the drain; and a gate insulator between the gate and the semiconductor layer. The gate insulator comprises a first layer adjoining the semiconductor layer; and a second layer. The first layer is formed from an amorphous fluoropolymer having a first dielectric constant and a first thickness. The second layer has a second dielectric constant and a second thickness. The first dielectric constant is smaller than 3, the first thickness is smaller than 200 nm, the second dielectric constant is higher than 5, and the second thickness is smaller than 500 nm.