The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2016

Filed:

Dec. 28, 2012
Applicants:

Tsinghua University, Beijing, CN;

Hon Hai Precision Industry Co., Ltd., New Taipei, TW;

Inventors:

Jun Zhu, Beijing, CN;

Hao-Su Zhang, Beijing, CN;

Zhen-Dong Zhu, Beijing, CN;

Qun-Qing Li, Beijing, CN;

Guo-Fan Jin, Beijing, CN;

Shou-Shan Fan, Beijing, CN;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/58 (2010.01); H01L 31/0216 (2014.01); G02B 6/10 (2006.01); H01L 31/068 (2012.01); H01L 33/44 (2010.01); H01L 31/056 (2014.01); H01L 31/054 (2014.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/58 (2013.01); G02B 6/10 (2013.01); H01L 31/0216 (2013.01); H01L 31/02168 (2013.01); H01L 31/056 (2014.12); H01L 31/0547 (2014.12); H01L 31/068 (2013.01); H01L 33/44 (2013.01); H01L 33/22 (2013.01); Y02E 10/52 (2013.01); Y02E 10/547 (2013.01);
Abstract

A semiconductor structure includes a first semiconductor layer, an active layer, a second semiconductor layer, and a cermet layer stacked together. The active layer is on a surface of the first semiconductor layer. The second semiconductor layer is on a surface of the active layer away from the first semiconductor layer. The cermet layer is on a surface of the second semiconductor layer away from the first semiconductor layer.


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