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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9368679 B1

PDFFull Text
Date of Patent:
Jun. 14, 2016

Filed:

Aug. 28, 2015

Semiconductor light emitting element

Applicant:

Stanley Electric Co., Ltd., Meguro-ku, Tokyo, JP;

Inventors:

Takayoshi Yamane, Yokohama, JP;

Ji-Hao Liang, Yokohama, JP;

Assignee:

STANLEY ELECTRIC CO., LTD., Tokyo, JP;

Attorney:

Holtz, Holtz & Volek PC

Primary Examiner:

Hsien Ming Lee

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 27/15 (2006.01); H01L 21/00 (2006.01); H01L 33/06 (2010.01); H01L 33/20 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01);
Abstract

A semiconductor light emitting element includes: a pit formation layer having a pyramidal pit caused by a threading dislocation generated in the first semiconductor layer; an active layer; and an electron blocking layer formed on the active layer to cover the recess portion. The active layer is formed on the pit formation layer and having an embedded portion formed so as to embed the pit and a recess portion formed on a surface of the embedded portion to correspond to the pit. The recess portion of the active layer has an apex formed at a position existing in a layered direction of the active layer within the active layer.

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