The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Aug. 28, 2015
Stanley Electric Co., Ltd., Tokyo, JP;
Takayoshi Yamane, Yokohama, JP;
Ji-Hao Liang, Yokohama, JP;
Mitsuyasu Kumagai, Yokohama, JP;
Shunya Ide, Yokohama, JP;
STANLEY ELECTRIC CO., LTD., Tokyo, JP;
Abstract
A semiconductor light emitting element includes: a pit formation layer formed on a first semiconductor layer and having a pyramidal pit; an active layer formed on the pit formation layer and having an embedded portion formed so as to embed the pit. The active layer has a multi-quantum well structure having at least one pair of well layer and barrier layer laminated alternately. The embedded portion has at least one embedded well portion corresponding to the well layer respectively and at least one embedded barrier portion corresponding to the barrier layer respectively. Each of the embedded well portion and the embedded barrier portion is configured such that a second apex angle of the embedded well portion is smaller than a first apex angle of the embedded barrier portion wherein the embedded well portion is subsequently formed on the embedded barrier portion.