The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Aug. 19, 2014
Roberto C. Myers, Columbus, OH (US);
Thomas F. Kent, Columbus, OH (US);
Roberto C. Myers, Columbus, OH (US);
Thomas F. Kent, Columbus, OH (US);
OHIO STATE INNOVATION FOUNDATION, Columbus, OH (US);
Abstract
A diode comprises nanowires compositionally graded along their lengths with an active region doped with gadolinium sandwiched between first and second compositionally graded AlGaN nanowire regions. The first graded AlGaN nanowire region is graded from gallium-rich to aluminum-rich with the compositional grading defining n-type polarization doping and the aluminum-rich end proximate the active region. The second graded AlGaN nanowire region is graded from aluminum-rich to gallium-rich with the compositional grading defining p-type polarization doping and with the aluminum rich end proximate the active region. The active region may include a GdN layer sandwiched between AlN layers, or an AlGdN layer with y≧0.5. The nanowires may be disposed on a silicon substrate having a GaN surface, with the gallium-rich end of the first graded AlGaN nanowire region proximate to the GaN surface, and a semitransparent electrical contact disposed on the gallium-rich end of the second graded AlGaN nanowire region.