The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Apr. 21, 2015
Applicant:
University of Oregon, Eugene, OR (US);
Inventors:
Shannon Boettcher, Eugene, OR (US);
Andrew Ritenour, Sunnyvale, CA (US);
Jason Boucher, Eugene, OR (US);
Ann Greenaway, Eugene, OR (US);
Assignee:
University of Oregon, Eugene, OR (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0304 (2006.01); H01L 31/0693 (2012.01); H01L 21/02 (2006.01); C30B 29/42 (2006.01); C30B 23/06 (2006.01);
U.S. Cl.
CPC ...
H01L 31/184 (2013.01); H01L 31/03042 (2013.01); H01L 31/0693 (2013.01); H01L 31/186 (2013.01); C30B 23/066 (2013.01); C30B 29/42 (2013.01); H01L 21/0257 (2013.01); H01L 21/02546 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); Y02E 10/50 (2013.01); Y02P 70/521 (2015.11);
Abstract
Disclosed herein are embodiments of methods for making GaAs thin films, such as photovoltaic GaAs thin films. The methods disclosed herein utilize sources, precursors, and reagents that do not produce (or require) toxic gas and that are readily available and relatively low in cost. In some embodiments, the methods are readily scalable for industrial applications and can provide GaAs thin films having properties that are at least comparable to or potentially superior to GaAs films obtained from conventional methods.