The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
May. 22, 2013
Applicant:
Hamamatsu Photonics K.k., Hamamatsu-shi, Shizuoka, JP;
Inventors:
Kazutoshi Nakajima, Hamamatsu, JP;
Toru Hirohata, Hamamatsu, JP;
Minoru Niigaki, Hamamatsu, JP;
Wataru Akahori, Hamamatsu, JP;
Kazuue Fujita, Hamamatsu, JP;
Assignee:
HAMAMATSU PHOTONICS K.K., Hamamatsu-shi, Shizuoka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 31/0352 (2006.01); H01L 27/144 (2006.01); H01L 31/09 (2006.01); B82Y 20/00 (2011.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0352 (2013.01); B82Y 20/00 (2013.01); H01L 27/1446 (2013.01); H01L 31/035236 (2013.01); H01L 31/09 (2013.01); H01L 27/14649 (2013.01);
Abstract
A photodetectorA comprises a multilayer structurehaving a first layerconstituted by first metal or first semiconductor, a semiconductor structure layermounted on the first layerand adapted to excite an electron by plasmon resonance, and a second layermounted on the semiconductor structure layerand constituted by second metal or second semiconductor.