The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Aug. 10, 2011
Santanu Bag, Yorktown Heights, NY (US);
David Aaron Randolph Barkhouse, New York, NY (US);
David Brian Mitzi, Mahopac, NY (US);
Teodor Krassimirov Todorov, Yorktown Heights, NY (US);
Santanu Bag, Yorktown Heights, NY (US);
David Aaron Randolph Barkhouse, New York, NY (US);
David Brian Mitzi, Mahopac, NY (US);
Teodor Krassimirov Todorov, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Techniques for fabrication of kesterite Cu—Zn—Sn—(Se,S) films and improved photovoltaic devices based on these films are provided. In one aspect, a method of fabricating a kesterite film having a formula CuZnSn(SSe), wherein 0≦x≦1; 0≦y≦1; 0≦z≦1; and −1≦q≦1 is provided. The method includes the following steps. A substrate is provided. A bulk precursor layer is formed on the substrate, the bulk precursor layer comprising Cu, Zn, Sn and at least one of S and Se. A capping layer is formed on the bulk precursor layer, the capping layer comprising at least one of Sn, S and Se. The bulk precursor layer and the capping layer are annealed under conditions sufficient to produce the kesterite film having values of x, y, z and q for any given part of the film that deviate from average values of x, y, z and q throughout the film by less than 20 percent.