The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Mar. 31, 2010
Reza Jalilizeinali, Oceanside, CA (US);
Eugene R. Worley, Irvine, CA (US);
Evan Siansuri, San Diego, CA (US);
Sreeker R. Dundigal, San Diego, CA (US);
Reza Jalilizeinali, Oceanside, CA (US);
Eugene R. Worley, Irvine, CA (US);
Evan Siansuri, San Diego, CA (US);
Sreeker R. Dundigal, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
An active diode with fast turn-on time, low capacitance, and low turn-on resistance may be manufactured without a gate and without a shallow trench isolation region between doped regions of the diode. A short conduction path in the active diode allows a fast turn-on time, and a lack of gate oxide reduces susceptibility of the active diode to extreme voltages. The active diode may be implemented in integrated circuits to prevent and reduce damage from electrostatic discharge (ESD) events. Manufacturing the active diode is accomplished by depositing a salicide block between doped regions of the diode before salicidation. After the salicide layers are formed on the doped regions, the salicide block is removed.