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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9368639 B1

PDFFull Text
Date of Patent:
Jun. 14, 2016

Filed:

Nov. 21, 2013

Oxide semiconductor thin film, production method thereof, and thin film transistor

Applicant:

Sumitomo Metal Mining Co., Ltd., Tokyo, JP;

Inventor:

Tokuyuki Nakayama, Tokyo, JP;

Assignee:

SUMITOMO METAL MINING CO., LTD., Tokyo, JP;

Attorney:

Katten Muchin Rosenman LLP

Primary Examiner:

Ngan Ngo

Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); C23C 14/08 (2006.01); H01L 29/24 (2006.01); C23C 14/34 (2006.01); C23C 14/58 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); C23C 14/08 (2013.01); C23C 14/3414 (2013.01); C23C 14/5806 (2013.01); H01L 21/02422 (2013.01); H01L 21/02425 (2013.01); H01L 21/02488 (2013.01); H01L 21/02565 (2013.01); H01L 21/02592 (2013.01); H01L 21/02631 (2013.01); H01L 29/04 (2013.01); H01L 29/24 (2013.01); H01L 29/66742 (2013.01); H01L 29/786 (2013.01); H01L 29/78693 (2013.01);
Abstract

An oxide crystalline thin film is used to provide an oxide semiconductor thin film that has comparatively high carrier mobility and is suitable as TFT channel layer material. Oxide semiconductor thin film is obtained by performing an annealing process on an amorphous oxide semiconductor thin film comprising an oxide including indium and titanium where the titanium content is 0.005 to 0.12 by a Ti/In atomic ratio at a heating temperature of 250° C. or greater and processing time of 1 minute to 120 minutes. The oxide semiconductor thin film is crystalline and comprises only the InOphase of bixbyite type structure, and has carrier density that is 1×10cm, and carrier mobility that is 1 cm/Vsec or greater.

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