The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
May. 17, 2011
Applicant:
Karim S. Boutros, Moorpark, CA (US);
Inventor:
Karim S. Boutros, Moorpark, CA (US);
Assignee:
HRL Laboratories, LLC, Malibu, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7831 (2013.01); H01L 29/66462 (2013.01); H01L 29/66484 (2013.01); H01L 29/778 (2013.01); H01L 29/7786 (2013.01);
Abstract
Principles of the present invention reduces the maximum electric field strength between a gate and a source or drain in a FET by breaking up the usually monolithic gate into a plurality of physically separate subgates that are electrically connected into one or more groups.