The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
May. 31, 2014
Applicant:
Fairchild Semiconductor Corporation, South Portland, ME (US);
Inventors:
Christopher Boguslaw Kocon, Mountain Top, PA (US);
Praveen Muraleedharan Shenoy, Wilkes Barre, PA (US);
Assignee:
Fairchild Semiconductor Corporation, South Portland, ME (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/683 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 21/265 (2006.01); H01L 23/495 (2006.01); H01L 23/498 (2006.01); H01L 29/10 (2006.01); H01L 29/165 (2006.01); H01L 29/417 (2006.01); H01L 29/49 (2006.01); H02M 3/00 (2006.01); H02M 3/335 (2006.01); H02M 7/48 (2007.01);
U.S. Cl.
CPC ...
H01L 29/407 (2013.01); H01L 21/3065 (2013.01); H01L 21/30655 (2013.01); H01L 21/31116 (2013.01); H01L 21/6835 (2013.01); H01L 29/0623 (2013.01); H01L 29/0634 (2013.01); H01L 29/0661 (2013.01); H01L 29/0696 (2013.01); H01L 29/402 (2013.01); H01L 29/4236 (2013.01); H01L 29/66348 (2013.01); H01L 29/66734 (2013.01); H01L 29/7396 (2013.01); H01L 29/7802 (2013.01); H01L 29/7804 (2013.01); H01L 29/7805 (2013.01); H01L 29/7806 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/7815 (2013.01); H01L 29/7828 (2013.01); H01L 29/7831 (2013.01); H01L 21/26586 (2013.01); H01L 23/4952 (2013.01); H01L 23/49816 (2013.01); H01L 29/0653 (2013.01); H01L 29/1095 (2013.01); H01L 29/165 (2013.01); H01L 29/41766 (2013.01); H01L 29/4238 (2013.01); H01L 29/42368 (2013.01); H01L 29/495 (2013.01); H01L 29/4933 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68363 (2013.01); H01L 2224/16 (2013.01); H01L 2924/01012 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/1301 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13034 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/1532 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/3011 (2013.01); H01L 2924/3025 (2013.01); H01L 2924/30105 (2013.01); H02M 3/00 (2013.01); H02M 3/33592 (2013.01); H02M 7/48 (2013.01); Y02B 70/1475 (2013.01);
Abstract
An accumulation-mode field effect transistor including a plurality of gates. The accumulation-mode field effect transistor including a semiconductor region including a channel region adjacent to but insulated from each of the plurality of gates.