The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Dec. 19, 2012
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 21/8238 (2006.01); H01L 21/28 (2006.01); H01L 21/3215 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/401 (2013.01); H01L 21/28061 (2013.01); H01L 21/32155 (2013.01); H01L 21/82385 (2013.01); H01L 21/823828 (2013.01); H01L 29/4236 (2013.01); H01L 29/4925 (2013.01); H01L 29/517 (2013.01);
Abstract
A transistor including a recessed gate structure having improved doping characteristics and a method for forming such a transistor. The transistor includes a recess in a semiconductor substrate, where the recess is filled with a recessed gate structure including an impurity doped layer and a layer doped with a capture species. The capture species accumulates the impurity and diffuses the impurity to other layers of the recessed gate structure.