The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2016

Filed:

Jun. 13, 2014
Applicant:

Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;

Inventors:

Doo Youl Lee, Seoul, KR;

Se Myung Kwon, Asan-si, KR;

Hyuk Soon Kwon, Suwon-si, KR;

Jang Soo Kim, Asan-si, KR;

Hyung Min Kim, Yongin-si, KR;

Jin-Ho Oh, Seoul, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/417 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 29/786 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); H01L 21/02164 (2013.01); H01L 21/02565 (2013.01); H01L 21/76852 (2013.01); H01L 27/1225 (2013.01); H01L 27/1288 (2013.01); H01L 29/41733 (2013.01); H01L 29/7869 (2013.01); H01L 21/32139 (2013.01);
Abstract

A thin film transistor array panel includes: a gate conductor disposed on a substrate and including a gate line and a gate electrode, a semiconductor layer overlapping the gate electrode and including an oxide semiconductor, a data conductor including a data line intersecting the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode, a sidewall covering side surface parts of the drain electrode and the source electrode adjacent to a channel region of the semiconductor layer, and a passivation layer covering the source electrode, the drain electrode, and the sidewall.


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