Methods for forming a self-aligned contact via selective lateral etch

Abstract

In some embodiments methods of processing a substrate include: providing a substrate having a contact structure formed on the substrate, wherein the contact structure comprises a feature defined by gate structures, a silicon nitride layer disposed on a upper surface of the gate structures and on sidewalls and a bottom of the feature, and an oxide layer disposed over the silicon nitride layer and filling the feature; etching an opening through the oxide layer to the silicon nitride layer disposed on the bottom of the opening, wherein a width of the opening is less than a width of the feature; expanding the opening in the oxide layer to form a tapered profile; exposing the substrate to ammonia and nitrogen trifluoride to form an ammonium fluoride gas that forms an ammonium hexafluorosilicate film on the oxide layer; and heating the substrate to a second temperature to sublimate the ammonium hexafluorosilicate film.