The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2016

Filed:

May. 31, 2013
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Chunsheng Jiang, Beijing, CN;

Haijing Chen, Beijing, CN;

Dongfang Wang, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/288 (2006.01); H01L 27/12 (2006.01); C25D 9/08 (2006.01); H01L 21/02 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); C25D 9/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2885 (2013.01); C25D 9/06 (2013.01); H01L 21/02183 (2013.01); H01L 21/02258 (2013.01); H01L 27/1237 (2013.01); H01L 27/1292 (2013.01); H01L 29/4908 (2013.01); H01L 29/517 (2013.01);
Abstract

An anti-diffusion layer, a preparation method thereof, a thin-film transistor (TFT), an array substrate and a display device are provided, involve the display device manufacturing field and can resolve problem that a high atmosphere temperature is need in process of preparing a tantalum dioxide anti-diffusion layer by PVD or CVD, which causes the gate electrode to volatilize and affect the performance of a display device. The method for preparing the anti-diffusion layer comprises: placing a conductive base () and a cathode () in a electrolytic solution (), taking the conductive base () as an anode, and forming a tantalum dioxide anti-diffusion layer on the conductive base () after energizing.


Find Patent Forward Citations

Loading…