The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Jan. 02, 2014
Applicant:
SK Hynix Inc., Icheon-Si, KR;
Inventor:
Jung-Nam Kim, Icheon-Si, KR;
Assignee:
SK hynix Inc., Icheon-Si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/283 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 21/283 (2013.01); H01L 21/28518 (2013.01); H01L 21/76897 (2013.01); H01L 27/2436 (2013.01); H01L 27/2463 (2013.01); H01L 29/41783 (2013.01); H01L 29/4236 (2013.01); H01L 29/665 (2013.01); H01L 29/66621 (2013.01); H01L 45/06 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/141 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/16 (2013.01); H01L 29/0847 (2013.01); H01L 29/78 (2013.01);
Abstract
Devices and methods based on disclosed technology include, among others, an electronic device including silicide layers capable of effectively reducing contact resistance in the electronic device including buried gates and a method for fabricating the electronic device. Specifically, an electronic device in one implementation includes a plurality of buried gates formed in a substrate and silicide layers formed over the substrate between the buried gates and protruding upwardly from the buried gates.