The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Feb. 22, 2013
Rohm Co., Ltd., Kyoto-shi, Kyoto, JP;
Heiji Watanabe, Suita, JP;
Takayoshi Shimura, Suita, JP;
Takuji Hosoi, Suita, JP;
Shuhei Mitani, Kyoto, JP;
Yuki Nakano, Kyoto, JP;
Ryota Nakamura, Kyoto, JP;
Takashi Nakamura, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
[Problem] To provide an SiC semiconductor device, with which stabilization of high-temperature operation can be achieved by decreasing mobile ions in a gate insulating film, and a method for manufacturing the SiC semiconductor device. [Solution Means] A semiconductor devicehas an MIS structure including an SiC epitaxial layer, a gate insulating filmand a gate electrodeformed on the gate insulating film. A gate insulating filmincludes a silicon oxide film in contact with the SiC epitaxial layer. In the MIS structure, an area density Qof positive mobile ions in the gate insulating filmis made no more than 1×10cm.