The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2016

Filed:

Dec. 29, 2014
Applicant:

Gwangju Institute of Science and Technology, Gwangju, KR;

Inventors:

Heung-Cho Ko, Gwangju, KR;

Hun-Soo Jang, Gwangju, KR;

Gun-Young Jung, Gwangju, KR;

Bokyeong Son, Gwangju, KR;

Hui Song, Gwangju, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 51/00 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 21/02645 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); H01L 21/02565 (2013.01); H01L 21/02603 (2013.01); H01L 51/0026 (2013.01);
Abstract

A method of preparing zinc oxide nanostructures using a liquid masking layer is disclosed. The method includes preparing a substrate having a zinc oxide seed layer formed thereon; loading the substrate in a reactor in which a lower liquid masking layer, a precursor liquid layer for hydrothermal growth, and an upper liquid masking layer are disposed in order; and forming zinc oxide nanostructures in a pattern on the substrate through hydrothermal growth by heating the precursor liquid layer for hydrothermal growth.


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