The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Nov. 08, 2013
Applicant:
Samsung Electro-mechanics Co., Ltd., Suwon, KR;
Inventors:
Min Cheol Park, Suwon, KR;
Young Ghyu Ahn, Yongin, KR;
Sang Soo Park, Suwon, KR;
Joon Yeob Cho, Seoul, KR;
Assignee:
SAMSUNG ELECTRO-MECHANICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01G 4/12 (2006.01); H05K 3/34 (2006.01); H01G 4/30 (2006.01); H01G 4/38 (2006.01);
U.S. Cl.
CPC ...
H01G 4/1227 (2013.01); H01G 4/1236 (2013.01); H01G 4/30 (2013.01); H01G 4/385 (2013.01); H05K 3/3442 (2013.01); H05K 3/3463 (2013.01); H05K 2201/10015 (2013.01); H05K 2201/2045 (2013.01); Y02P 70/613 (2015.11);
Abstract
Disclosed herein is a multi-layered capacitor, including: an element formed by alternately multi-layering a dielectric layer and an internal electrode; and external terminals disposed at both ends of the element, wherein the dielectric layer disposed at an upper end U and a lower end L of the element is formed of a paraelectric material and the dielectric layer disposed at a central part C of the element is formed of a ferroelectric material.