The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Dec. 09, 2014
Applicant:
Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v., Munich, DE;
Inventor:
Johannes Mueller, Dresden, DE;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); G11C 7/00 (2006.01); G11C 14/00 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 11/221 (2013.01); G11C 11/2273 (2013.01); G11C 14/0027 (2013.01); G11C 14/0063 (2013.01); G11C 11/22 (2013.01); G11C 11/2275 (2013.01); G11C 11/5657 (2013.01);
Abstract
Nonvolatile storage with long memory endurance having the advantages of easy manufacturability is obtained by using a memory cell having an information storage element including a ferroelectric material, and operating the memory cell in a volatile operating mode and a nonvolatile operating mode. The option of operating the memory cell in the volatile operating mode enables the associated advantages of high memory speed at long endurance, wherein, however, the option of operating the memory cell in the nonvolatile operating mode can bridge gaps in the power supply.